[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-40] Analysis for BGaN epitaxial growth mechanism using H₂ carrier gases

〇yuuki shimizu¹, Kazushi Ebara¹, Hideya Shintaku¹, Yoku Inoue¹, Toru Aoki², Kohei Shima³, Kazunobu Kojima³, Shigefusa Chichibu^3,4, Takayuki Nakano^1,2 (1.Shizuoka Univ., 2.R.I.E., Shizuoka Univ., 3.IMRAM, Tohoku Univ., 4.IMaSS, Nagoya Univ.)

Keywords:BGaN, MOVPE, epitaxial