[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-45] Low-temperature MBE growth of a half-metallic Co₂FeSi film on GaN(0001)

〇Shinya Yamada^1,2, Ryosei Honda², Yuki Goto², Shuhei Ichikawa³, Jun Tatebayashi³, Yasufumi Fujiwara^3,1, Kohei Hamaya^1,2 (1.CSRN, Grad. Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng. Sci., Osaka Univ., 3.Grad. Sch. Eng., Osaka Univ.)

Keywords:Molecular beam epitaxy, Heusler alloy, GaN

分子線エピタキシー法によるGaN(0001)上へのCo₂FeSi薄膜の低温成長とその磁気特性，界面の電気伝導特性について述べる．