[18a-PB3-1~47] 15.4 III-V-group nitride crystals

△ [18a-PB3-8] Voltage reduction of blue edge emitting LD with n-type conducting AlInN / AlGaN multiple cladding structure

〇(M1)Yuki Kato¹, Kohei Miyoshi², Ryousuke Iida¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,3 (1.Fac.Sci.&Eng., Meijo Univ., 2.USHIO OPTO SEMICONDUCTORS,INC., 3.Akasaki Research Center Nagoya Univ.,Japan)

Keywords:edge emitting laser diode