[18a-PB3-1~47] 15.4 III-V-group nitride crystals

[18a-PB3-9] Optimization of p-Cladding Layer for Improvement of Deep Ultraviolet Light Emitting Diode performance

〇Yuji Tomita¹, Akira Mishima², Yuya Yamaoka¹, Tadanobu Arimura¹, Shuuichi Koseki¹, Yoshiki Yano¹, Kou Matsumoto¹, Hideki Hirayama³ (1.TNSC, 2.TNCSE, 3.RIKEN)

Keywords:MOCVD, AlGaN, DUV-LED

This paper reports the effect of electron blocking layer (EBL) thickness and Mg concentration in p-GaN layer on DUV-LED performance. The strong droop was suppressed as the EBL thickness was varied from 35 nm to 10 nm. While, by increasing Mg concentration from 2.0 × 10¹⁹ cm^-3 to 1.5 × 10²⁰ cm^-3, it was observed that breakdown current at which the diode was broken was increased from 17 mA to more than 100 mA . It was confirmed that increasing Mg concentration tended to improve the surface coverage of p-GaN. It is presumed the local electric field concentration was reduced because of the improvement of the p-GaN coverage.