2019年第80回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.5 デバイス/配線/集積化技術

[18p-B11-1~14] 13.5 デバイス/配線/集積化技術

2019年9月18日(水) 13:15 〜 17:00 B11 (B11)

小林 正治(東大)、右田 真司(産総研)、若林 整(東工大)

13:15 〜 13:30

[18p-B11-1] [Young Scientist Presentation Award Speech] Mechanisms of Reverse-DIBL and NDR Observed in Ferroelectric FETs

Chengji Jin1、Takuya Saraya1、Toshiro Hiramoto1、Masaharu Kobayashi1 (1.The Univ. of Tokyo)

キーワード:negative capacitance, steep slope, polarization switching

Ferroelectric FET (FeFET) with steep subthreshold slope (SS) becomes one of the most promising transistor solutions for low-power computing. Since the mechanism of steep SS is based on negative capacitance (NC) effect of ferroelectric (FE), it is also called NCFET. While NCFET is originally proposed by the quasi-static NC (QSNC) theory, recently, it is reported that steep SS can be explained by the transient NC (TNC) theory with dynamics of polarization reversal as well. In this work, we show the previously reported reverse drain-induced barrier lowering (R-DIBL) and negative differential resistance (NDR) can be explained by the TNC theory. Their mechanisms are also discussed.