[18p-B11-1~14] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

▲ [18p-B11-1] [Young Scientist Presentation Award Speech] Mechanisms of Reverse-DIBL and NDR Observed in Ferroelectric FETs

〇Chengji Jin¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.The Univ. of Tokyo)

Keywords:negative capacitance, steep slope, polarization switching

Ferroelectric FET (FeFET) with steep subthreshold slope (SS) becomes one of the most promising transistor solutions for low-power computing. Since the mechanism of steep SS is based on negative capacitance (NC) effect of ferroelectric (FE), it is also called NCFET. While NCFET is originally proposed by the quasi-static NC (QSNC) theory, recently, it is reported that steep SS can be explained by the transient NC (TNC) theory with dynamics of polarization reversal as well. In this work, we show the previously reported reverse drain-induced barrier lowering (R-DIBL) and negative differential resistance (NDR) can be explained by the TNC theory. Their mechanisms are also discussed.