The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[18p-B31-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 18, 2019 1:15 PM - 6:00 PM B31 (B31)

Kouichi Akahane(NICT), Sachie Fujikawa(Tokyo Denki University), Nobuaki Kojima(Toyota Tech. Inst.)

5:00 PM - 5:15 PM

[18p-B31-13] Microlenses fabricated on GaAs substrate

Tatsuya Imaoka1, Homare Kambara1, Taishi Sasaki1, Satoshi Shimomura1 (1.Ehime Univ)

Keywords:GaAs, Etching, microlens

With the first etching with a GaAs substrate masked and the second etching performed with the mask removed, we aimed to produce a focusing lens for infrared surface-emitting lasers and LEDs. We found the conditions for preparing the microlens by adjusting the etching time of the phosphoric acid based etchant and demonstrated that it was possible to collect light.