[18p-C212-1~6] 15.7 Crystal characterization, impurities and crystal defects

[18p-C212-6] First-principles analysis on the behavior of metal atom near dopant complex in Si crystal

〇Hiroki Nagakura^1,2, Koji Sueoka³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

Keywords:semiconductor, metal