[18p-E101-1~7] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors -Development of New Functionality and Expansion to Electronic and Optical Devices-

[18p-E101-4] Towards GaN Nanowire-based Vertical FETs

〇Junichi Motohisa¹ (1.Hokkaido Univ.)

Keywords:Semiconductor Nanowire, Vertical FET, selective area growth

III-V semiconductor nanowires are attracting interest for the vertical FETs with multi-gate or surrounding gate structures as a possible candidate to replace current FETs in Si-CMOS technology. In nitride semiconductors, FETs with superior characteristics are recently reported utilizing multi-gate geometry with nanostructures including nanowires. In this presentation, we will present possibility and issues in GaN-nanowire and related nanostucture-based vertical FETs with multi-gate structures for practical applications. Our efforts towards GaN nanowire vertical FETs will also be introduced.