[18p-E207-1~11] 15.1 Bulk crystal growth

[18p-E207-11] Low temperature solution growth of GaSe crystal from an indium flux by temperature gradient solution growth and traveling heater method

〇Yohei Sato¹, Chao Tang¹, Katsuya Watanabe¹, Junya Ohsaki¹, Takuya Yamamoto², Tadao Tanabe¹, Yutaka Oyama¹ (1.Tohoku Univ. Eng., 2.Tohoku Univ. Env.)

Keywords:Gallium selenide, solution growth, THz wave

In this study, layered compound semiconductor GaSe crystal for terahertz (THz) wave source is grown by solution growth. In this report, GaSe crystal was grown from In flux without seed crystal by temperature gradient solution growth and traveleng heater method. As evaluation of grown crystal, THz wave generation property of GaSe crystal grown from In flux is compared with that of grown crystal from Ga flux.