[18p-E207-1~11] 15.1 Bulk crystal growth

[18p-E207-7] X-ray topography and optical charcterization of ScAlMgO₄ (SCAM) single crystals grown by CZ method

〇Takashi Fujii^1,2, Tsuguo Fukuda¹, Tsutomu Araki², Kazumasa Sugiyama³, Kotaro Ishiji⁴, Ryuichi Sugie⁵ (1.Fkuda Crystal Lab., 2.Ritsumeikan Univ., 3.IMR, 4.SAGA-LS, 5.TRC)

Keywords:ScAlMgO4, dislocation-free, GaN

We have studied the ScAlMgO₄ (SCAM) single crystals, which are attracting attention for GaN epitaxial substrate. Now, we observed the X-ray refracting topography and characterized the optical performance of SCAM. The c-face SCAM wafer with 40mm in diameter was obtained from the bulk single crystal grown by CZ method. As a result, any dislocations were not found in a wide range of wafer. Then, it becomes clear that the SCAM crystals were dislocation-free like Si crystals. Furthermore, we have characterized the optical performance of SCAM.