Keywords:topological insulator, BiSb
BiSb topological insulator is a promising candidate for spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM), due to its giant spin Hall effect (spin Hall angle is 52) and high electrical conductivity at room temperature. However, high quality single crystalline BiSb thin films have been obtained only by molecular beam epitaxy (MBE), which is not used in MRAM manufacturing. In this work, we investigated the characteristics of BiSb thin films fabricated by radio frequency (RF) magnetron sputtering on sapphire substrates. We show that the sputtered BiSb thin films have relatively good crystal quality and high electrical conductivity, which are promising for MRAM applications.
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