The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.4 Semiconductor spintronics, superconductor, multiferroics

[18p-E216-1~10] 10.4 Semiconductor spintronics, superconductor, multiferroics

Wed. Sep 18, 2019 1:15 PM - 4:00 PM E216 (E216)

Pham Nam Hai(Tokyo Tech), Kohei Hamaya(Osaka Univ.)

3:00 PM - 3:15 PM

[18p-E216-7] Crystal Growth and Evaluation of BiSb Topological Insulator by Sputter Deposition

Fan Tuo1, Mustafa Tobah1,2, Takanori Shirokura1, Nguyen Huynh Duy Khang1, Pham Nam Hai1,3,4 (1.Tokyo Tech., 2.Univ. Illinois, UC., 3.Univ. Tokyo, 4.JST-CREST)

Keywords:topological insulator, BiSb

BiSb topological insulator is a promising candidate for spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM), due to its giant spin Hall effect (spin Hall angle is 52) and high electrical conductivity at room temperature. However, high quality single crystalline BiSb thin films have been obtained only by molecular beam epitaxy (MBE), which is not used in MRAM manufacturing. In this work, we investigated the characteristics of BiSb thin films fabricated by radio frequency (RF) magnetron sputtering on sapphire substrates. We show that the sputtered BiSb thin films have relatively good crystal quality and high electrical conductivity, which are promising for MRAM applications.

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