[18p-E216-1~10] 10.4 Semiconductor spintronics, superconductor, multiferroics

[18p-E216-9] Analysis of quantum dot photoluminescence using exciton quantum gate simulator

〇Tomah Sogabe^1,2,3, Koudai Shiba^2,3, Katsuyoshi Sakamoto², Kouichi Yamaguchi² (1.UEC, i-PERC, 2.UEC, 3.Grid Inc.)

Keywords:quantum bit, quantum gate, quantum dot

An adiabatic quantum computation algorithm has been developed as an optimization algorithm for computing on a quantum gate quantum computer. In this study, we developed an exciton-type quantum gate simulator method using quantum phase transition between excitons in a system of quantum dots caused by temperature change. We apply this method to the experimental analysis of the light emission characteristics of high density InAs quantum dot layer on GaAsSb / GaAs (001) and report the verification result by the feature reproduction of the light emission intensity spectrum of the quantum dot from which the quantum phase transition originates.