1:45 PM - 2:00 PM
▲ [18p-E302-1] Temperature dependence of CH3NH2 molecular defect in CH3NH3PbI3 thin film formed by sequential vacuum evaporation and its THz-wave absorption property
Keywords:organic-inorganic hybrid perovskite thin film, Molecular defect control, THz-wave absorption property
Beyond solar-cell application using organic-inorganic hybrid perovskite (OHP) materials, many researchers started understanding physical properties and their origins to find a possibility of a new application. Recently, a significant THz-wave absorption property in CH3NH3PbI3(MAPbI3) hybrid perovskite thin film was reported with the origin of Pb-I different vibration mode incorporated with CH3NH2molecular defect. From this report, it figures out that the control of defect density is essential to modulate the THz-wave absorption property.
To control the density of CH3NH2molecular defect in MAPbI3hybrid perovskite thin film formed by the sequential vacuum evaporation (SVE) method, it requires to find a method and its trend. The MAPbI3thin films were fabricated by the SVE method and performed with various post-annealing treatments such as A: No annealing, B: At 100 oC for 45 min (The normal post-annealing condition for solar-cell application), C: At 150 oC for 10 min, and D: At 150 oC for 30 min. The grain size and boundary are become large and clear confirmed by the scanning electron microscopy measurements, respectively. (Fig. 1a-d) Also, we can find the different densities of CH3NH2molecular defect from C 1score-level spectra obtained by high-resolution x-ray photoelectron spectroscopy. (Fig. 1e and f) From these results, the post-annealing method is confirmed with one of the defect control functions. For each sample, moreover, we performed THz-Time Domain Spectroscopy (THz-TDS) to obtain the THz-wave absorption property. In this presentation, we will talk about the relationship between the density of CH3NH2molecular defect and THz-wave absorption property.
To control the density of CH3NH2molecular defect in MAPbI3hybrid perovskite thin film formed by the sequential vacuum evaporation (SVE) method, it requires to find a method and its trend. The MAPbI3thin films were fabricated by the SVE method and performed with various post-annealing treatments such as A: No annealing, B: At 100 oC for 45 min (The normal post-annealing condition for solar-cell application), C: At 150 oC for 10 min, and D: At 150 oC for 30 min. The grain size and boundary are become large and clear confirmed by the scanning electron microscopy measurements, respectively. (Fig. 1a-d) Also, we can find the different densities of CH3NH2molecular defect from C 1score-level spectra obtained by high-resolution x-ray photoelectron spectroscopy. (Fig. 1e and f) From these results, the post-annealing method is confirmed with one of the defect control functions. For each sample, moreover, we performed THz-Time Domain Spectroscopy (THz-TDS) to obtain the THz-wave absorption property. In this presentation, we will talk about the relationship between the density of CH3NH2molecular defect and THz-wave absorption property.