4:15 PM - 4:30 PM
[18p-E303-10] TCAD Simulation of Phonon Thermal Transport in MOSFETs on the Basis of Boltzmann Equation
Keywords:thermal transport, phonon, TCAD
Presentation information
Oral presentation
13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials
[18p-E303-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials
Wed. Sep 18, 2019 1:45 PM - 4:45 PM E303 (E303)
Nobuya Mori(Osaka Univ.)