[18p-E304-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [18p-E304-1] Doping of Aluminum to Poly-Si Thin Films Coated with Alumina Sol Solution by KrF Excimer Laser Irradiation

〇(B)Takayuki Kurashige¹, Kaname Imokawa^1,2, Akira Suwa¹, Daisuke Nakamura¹, Tetsuya Goto³, Hiroshi Ikenoue^1,2 (1.Kyushu Univ., 2.Dept. of Gigaphoton, Kyushu Univ., 3.Tohoku Univ.)

Keywords:Low-temperature poly-Si (LTPS), Thin film transistor (TFT)

Low temperature polysilicon (LTPS) thin films are used as channel materials for thin film transistors (TFTs). Conventionally, vacuum and high temperature processes such as ion implantation and furnace annealing are required for doing. Therefore, in order to realize mass production of LTPS-TFTs using plastic substrates, it is necessary to develop low temperature doping technologies without vacuum processes. We have reported that implantation and activation of P atoms, which is n-type dopant, can be simultaneously achieved by excimer laser annealing (ELA) of LTPS thin films with coating phosphoric acid solution, which is called as excimer laser doping. In this presentation, we report that excimer laser doping of Al (p-type dopant) to LTPS thin films with alumina sol coating. After the excimer laser doping, p-type LTPS thin films with hole concentration=8.9×10¹⁸ cm^-3 and hole mobility=13 cm²/Vs can be formed. We are currently fabricating n-channel and p-channel TFTs on the same substrate by the excimer laser doping. In the presentation, I will explain the formation of CMOS circuits and its electrical characteristics.