[18p-E311-1~18] 6.3 Oxide electronics

[18p-E311-15] Capping layer effect on conductivity at SrTiO₃ interfaces

〇Jiyeon N Lee¹, Mikk Lippmaa¹ (1.ISSP, Univ. of Tokyo)

Keywords:interface, SrTiO3, oxide

In this work, we study the effect of the cap layer thickness on the transport behavior of La delta-doping layers embedded in SrTiO₃. We aim to determine how the electron confinement is affected by the vicinity of the cap layer surface. We use transport and Hall analysis to probe the carrier depth distribution for thin cap layers and attempt to develop a capping regime that allows surface-sensitive electronic structure probes like ARPES and PEEM to be used while maintaining the metallic 2D carrier confinement.