[18p-E311-1~18] 6.3 Oxide electronics

▼ [18p-E311-4] Electrical Transport and Magnetic Properties of LuFe₂O₄ Epitaxial Thin Films

〇(D)YouJin Kim¹, Shinya Konishi¹, Yuichiro Hayasaka², Itsuhiro Kakeya³, Katsuhisa Tanaka¹ (1.Department of Material Chemistry, Graduate School of Engineering, Kyoto Univ., 2.The Electronic Microscopy Center, Tohoku Univ., 3.Departement of Electronic Science and Engineering, Graduate School of Engineering ,Kyoto Univ.)

Keywords:hexagonal ferrite, exchange bias effect, Mott-VRH

Among the RFe₂O₄ <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404606859699177400">compounds</gwmw>, structure and properties of LuFe₂O₄ <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404733363500944780">have</gwmw> been <gwmw class="ginger-module-highlighter-mistake-type-3" id="gwmw-15613404733368246098750">most extensively</gwmw> explored, but most of the studies have been performed for bulk materials. In contrast, there are not so many reports on thin film forms of <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404760658434108030">LuFe</gwmw>₂O₄, although the thin films are important, especially from a point of view of device applications. In the present study, we report on magnetic and electrical properties of <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404905065512319697">LuFe</gwmw>₂O₄ <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404935479536487846">thin</gwmw> films prepared by a pulsed laser deposition method. We found that hexagonal LuFeO₃ <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613404998931205179696">and</gwmw> Lu₂Fe₃O₇ <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613405106819767788306">phases</gwmw> of very thin layers were formed at the interface between the LuFe₂O₄ <gwmw class="ginger-module-highlighter-mistake-type-1" id="gwmw-15613405131522510063030">thin</gwmw> films and the substrate, and such a structure led to large exchange bias effect. In addition, we measured the temperature dependence of electrical resistivity and observed a change in electronic transport behavior from thermal activation scheme to 3D Mott-variable range hopping at the charge ordering temperature.