[18p-E311-1~18] 6.3 Oxide electronics

△ [18p-E311-6] Negative magnetoresistance of EuNbO_3-xN_x thin films

〇Takahiro Maruyama¹, Akira Chikamatsu¹, Yasushi Hirose¹, Tukasa Katayama¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

Keywords:oxynitride, thin film, magnetoresistance

Oxides containing Eu²⁺(4f ⁷) are famous for their various physical properties due to their localized spins. EuNbO₂N has been reported to exhibit a large negative magnetoresistance with the MR ratio of over -99%. This compound has been synthesized only in sintered powder form. For detailed elucidation of transport and magnetic properties, it is highly desirable to produce a single crystalline thin film without side effects such as grain boundary scattering. Therefore, in this study, we fabricate EuNbO_3-xN_x single crystal thin film and investigate its magnetoresistance effect.