Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature

Masahiro Takahashi; Atsushi Tanaka; Yuto Ando; Hirotaka Watanabe; Manato Deki; Maki Kushimoto; Shugo Nitta; Yoshio Honda; Kevin J. Chen; Hiroshi Amano

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

4:00 PM - 4:15 PM

△ [18p-N302-12] Suppression of green luminescence by co-implantation of Mg/F ions into GaN at high temperature

〇Masahiro Takahashi¹, Atsushi Tanaka^2,3, Yuto Ando¹, Hirotaka Watanabe², Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Kevin J. Chen^2,4, Hiroshi Amano^2,3,5,6 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Hong Kong Univ. of Sci. and Technol., 5.Nagoya Univ. ARC, 6.Nagoya Univ. VBL)

Keywords:Ion implantation, Gallium nitride, High temperature implantation