Mapping of N-polar p-type GaN Schottky contacts using scanning internal photoemission microscopy

Kenji Shiojima; Tomoyuki Tanigawa; Ryuji Katayama; Takashi Matsuoka

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

2:00 PM - 2:15 PM

[18p-N302-5] Mapping of N-polar p-type GaN Schottky contacts using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Tomoyuki Tanigawa², Ryuji Katayama², Takashi Matsuoka³ (1.Univ. of Fukui, 2.Osaka Univ., 3.NICHe, Tohoku Univ.)

Keywords:GaN, Schottky contact, scanning internal photoemission microscopy

We present our experimental results on Schottky contacts formed on N-polar p-GaN wafers to characterize surface defects by using scanning internal photoemission microscopy.