The 80th JSAP Autumn Meeting 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

Wed. Sep 18, 2019 1:00 PM - 6:00 PM N302 (N302)

Masashi Kato(Nagoya Inst. of Tech.), Taketomo Sato(Hokkaido Univ.)

3:00 PM - 3:15 PM

[18p-N302-8] Mg recoil implantation into GaN with incident Nitrogen ion (4)

〇Toshikazu Yamada1, Hisashi YAMADA1, Tokio TAKAHASHI1, Mituaki SIMIZU1 (1.National Institute of Advanced Industrial Science & Technology)

Keywords:GaN, ion implantation, Mg