The 80th JSAP Autumn Meeting 2019

Presentation information

Poster presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[18p-PA5-1~22] 6.4 Thin films and New materials

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PA5 (PA)

4:00 PM - 6:00 PM

[18p-PA5-13] Density-Functional-Theory Analysis of Electron-Phonon Interaction in 2D/3D α-MoO3

〇(M2)Ling Zhou1, Emi Minamitani2, Satoshi Watanabe1 (1.School of Eng. UTokyo, 2.Inst. Mol. Sci)

Keywords:Electron-Phonon interaction, mobility

α-MoO3, a layered wide-gap semiconductor, has attracted considerable attention for a long time because of its potential in many applications, from sensors to catalysts. Recently, two-dimensional (2D) α-MoO3 has also been synthesized, showing high mobility and high permittivity, which is suitable for the application in field effect transistors.The carrier transport in α-MoO3 is underpinned by electron-phonon interaction. Therefore, investigation of electron-phonon interaction in this material is high demand in order to improve their transport properties. Here, we focus on the electron-phonon coupling calculation by density functional theory (DFT) to evaluate phonon-limited mobilities of bulk (3D) and 2D α-MoO3 based on the Boltzmann transport equation.