[18p-PB1-1~84] 10 Spintronics and Magnetics (Poster)

▲ [18p-PB1-28] Investigation of Electrical Spin Injection into GaAs Using Co₂Fe_0.4Mn_0.6Si Heusler Alloy

〇Juncheng Wang¹, Takeo Koike¹, Mikihiko Oogane¹, Masakiyo Tsunoda¹, Yasuo Ando¹ (1.Tohoku Univ.)

Keywords:semiconductor, spin injection, Heuslar alloy

The spin-MOSFET is expected to show a high performance in integrated circuits. Highly efficient spin injection into semiconductors from ferromagnet is important for the realization of spin-MOSFET. However, it is difficult to realize efficient spin injection due to the conduction mismatch problem. In order to enhance the efficiency of spin injection, it was proposed to use a half-metal theoretically having a spin polarization of 100%. Co-based full Heusler alloys are expected to be a source of spin injection into semiconductors because of its high Curie temperature, small lattice mismatch with Ⅲ-V semiconductor and high spin polarization. In this study, we focused on Co₂Fe_0.4Mn_0.6Si (CFMS) and aimed to fabricate high quality thin films on GaAs substrates for the realization of high efficiency of spin injection.