[18p-PB1-1~84] 10 Spintronics and Magnetics (Poster)

▲ [18p-PB1-3] Structural and magnetic properties of nitrogen co-doped II-VI diluted magnetic semiconductor (Zn,Fe)Te thin films grown under Zn-rich condition by MBE

〇(D)INDRAJIT SAHA¹, YUTA TOMOHIRO¹, KEN KANAZAWA¹, HIROAKI NITANI², SHINJI KURODA¹ (1.Inst. Mater. Sci., Univ. Tsukuba, 2.KEK)

Keywords:Diluted magnetic semiconductor, Room Temperature Ferromagnetism

We have investigated the structural and Magnetic properties of Zn_1-xFe_xTe:N thin films by molecular beam epitaxy (MBE) in excess of Zn flux over Te flux with the Fe composition fixed at x = 0.014 and the N concentration varied in the range of [N] = 10¹⁸ - 10²⁰ cm^-3. We have observed drastic change of magnetic properties from van-Vleck paramagnetic (Undoped film) to room tempearture frromagnetic behavior (N-doped films). In the intermediate N-doping condition of [N] = 10¹⁸ - 10¹⁹ cm^-3, the observed room temperature ferromagnetic behavior would be attributed the change of Fe valence state from Fe²⁺ to Fe^2+/3+ or to solely Fe³⁺ due to the incorporation of N.