[18p-PB1-1~84] 10 Spintronics and Magnetics (Poster)

[18p-PB1-77] Element-Specific Density of States of the Heusler-Type Co₂MnGe Film

〇Takashi Kono¹, Masaaki Kakoki¹, Tomoki Yoshikawa¹, Xiaoxiao Wang¹, Kazuki Sumida², Koji Miyamoto³, Takayuki Muro⁴, Kiji Takeda⁵, Yuji Saitoh⁵, Kazuki Goto⁶, Yuya Sakuraba⁶, Kazuhiro Hono⁶, Akio Kimura¹ (1.Grad. Sch. of Sci. Hiroshima Univ., 2.Dep. of Phys. Tokyo Tech., 3.HSRC. Hiroshima Univ., 4.JASRI, 5.JAEA, 6.NIMS. CMSM.)

Keywords:Photoelectron Spectroscopy

Resonant photoelectron spectroscopy (RPES) at the Co and Mn 2p core absorption edges in half-metallic Co₂MnGe has been performed to unveil element-specific density of states (DOS).A significant contribution of the Mn 3d partial DOS (PDOS) near the Fermi level (E_F) has been clarified through the measurement at the Mn 2p absorption edge.Further analysis with the first-principles calculation has revealed that it has t_2g symmetry, which must be responsible for electrical conductivity along the line being perpendicular to the film plane.The dominant normal Auger contribution seen at the Co 2p absorption edge implies a delocalization of photoexcited Co 3d electrons.The difference in the degree of localization of Mn 3d and Co 3d electrons in Co₂MnGe has also been explained from the first-principles calculations.Our findings of the element/orbital specific electronic states near the E_F will open an avenue to future interface design of the magnetic tunneling junctions to overcome the temperature induced reduction of magnetoresistance.