[18p-PB1-1~84] 10 Spintronics and Magnetics (Poster)

▲ [18p-PB1-84] Room-temperature spin-orbit torque magnetization switching induced by non-epitaxial BiSb topological insulator

Huynh Duy Khang Nguyen¹, Yasuyoshi Miyamoto^2,4, 〇Namhai Pham^1,3,4 (1.Tokyo Tech, 2.NHK, 3.Univ. Tokyo, 4.JST-CREST)

Keywords:Topological insulator, BiSb, Spin orbit torque

BiSb is a conductive topological insulator with a giant spin Hall effect (θ_SH~52) at room temperature, which is very promising for spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) and race-track memory. However, high quality single crystalline BiSb thin films require epitaxial growth by molecular beam epitaxy (MBE), which is not always available in realistic applications. Here, we study room-temperature SOT magnetization switching induced by a non-epitaxial BiSb thin film with poor crystal quality and low electrical conductivity to determine its lower-bound performance. We found that, even under this situation, BiSb still outperforms heavy metals by an order of magnitude in terms of the switching current density and spin Hall angle.