Keywords:Topological insulator, BiSb, Spin orbit torque
BiSb is a conductive topological insulator with a giant spin Hall effect (θSH~52) at room temperature, which is very promising for spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) and race-track memory. However, high quality single crystalline BiSb thin films require epitaxial growth by molecular beam epitaxy (MBE), which is not always available in realistic applications. Here, we study room-temperature SOT magnetization switching induced by a non-epitaxial BiSb thin film with poor crystal quality and low electrical conductivity to determine its lower-bound performance. We found that, even under this situation, BiSb still outperforms heavy metals by an order of magnitude in terms of the switching current density and spin Hall angle.
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