[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-1] High temperature growth of ZnO crystals on a c-plane sapphire substrate by mist chemical vapor deposition technique

〇Kosei Ohashi¹, Kenya Fujiwara¹, Mikihiro Yamamoto¹, Kazuhiko Hara¹, Tetsuya Kouno¹ (1.Shizuoka univ.)

Keywords:ZnO, mist-CVD