[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-23] Nanostructure fill with Cu-doped ZnO using supercritical CO₂ fluids

〇Eiichi Kondoh¹, Akemi Shioda¹, Lianhua Jin¹, Bernard Gelloz² (1.Univ. Yamanashi, 2.Nagoya Univ.)

Keywords:Supercritical fluid, Transparent oxide, zinc oxide

The optoelectronic properties such as photoluminescence and electroluminescence of porous silicon (PS) make it attractive material candidate for luminescent devices. Filling PS layers with a conductive substance is an approach to improve the electrical characteristics of the material.
Supercritical fluid chemical deposition (SFCD) has been proven to have an excellent capability of filling nano-concave/meso-porous structures. In this work, we deposited conductive ZnO films using the SFCD technique into nano features.