The 80th JSAP Autumn Meeting 2019

Presentation information

Poster presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PB5 (PB)

4:00 PM - 6:00 PM

[18p-PB5-4] High temperature growth of ZnO crystals on an a-plane sapphire substrate by mist chemical vapor deposition technique

Kenya Fujiwara1, Kosei Ohashi1, Mikihiro Yamamoto1, Kazuhiko Hara1, Tetsuya Kouno1 (1.Shizuoka Univ.)

Keywords:ZnO, mist-CVD