[19a-B11-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[19a-B11-4] Picosecond electron dynamics in a silicon single-electron source

〇Gento Yamahata¹, Sungguen Ryu², Nathan Johnson¹, H. -S. Sim², Akira Fujiwara¹, Masaya Kataoka³ (1.NTT BRL, 2.KAIST, 3.NPL)

Keywords:quantum dot, single electron, coherent oscillations

We detect picosecond quantum oscillations in a silicon single-electron source using a trap level. The quantum oscillations are converted to current oscillations due to resonant tunneling through the trap level. The experimental results agree well with calculations. This is a new detection method of the ultra high-speed electron dynamics and the results is an important step toward control of a wave packet emitted from the single-electron source.