[19a-C310-1~12] 6.6 Probe Microscopy

[19a-C310-10] Photo-induced carrier dynamics probed by time-resolved THz-STM

〇(M1)Ippo Igarashi¹, Shoji Yoshida¹, Yusuke Arashida¹, Hideki Hirori², Takehiro Tachizaki³, Katsumasa Yoshioka⁴, Yasuyuki Sanari², Osamu Takeuchi¹, Yoshihiko kanemitsu², Hidemi Shigekawa¹ (1.Univ. of Tsukuba, 2.Kyoto Univ, 3.Tokai Univ, 4.Yokohama Natnl. Univ)

Keywords:STM, THz

We studied photo-induced carrier dynamics of a transition metal dichalcogenide of MoTe2 under low-temperature (54 K) by using optical-pump terahertz scanning tunneling microscopy (THz-STM). This method can observe tunneling current in ultrafast time regime by modulating the bias voltage of the tunnel junction by the teratertz wave. The transient response of the tunneling current of the optically pumped MoTe2 showed that two component of decay constant of 18 ps and 606 ps, respectively.