[19a-C310-1~12] 6.6 Probe Microscopy

[19a-C310-9] Electron tunneling mechanism via the manipulated atom on an InAs/GaSb cross-section

〇Kyoichi Suzuki¹, Koji Onomitsu², Kiyoshi Kanisawa² (1.Fukuoka Inst. Tech., 2.NTT BRL, NTT Corp.)

Keywords:semiconductor heterostructures, double-barrier tunneling junctions, quantum dot

We have investigated indium atom manipulation on InAs/GaSb heterostructures and its electronic properties by STM for aiming at atomic scale devices. Here, we measured the electron tunneling spectra via the manipulated atom on the GaSb layer, which acts as a potential barrier, with changing the atom position. As a result, we conclude that the double-barrier tunneling junctions (STM tip- Atom-InAs conduction band) are formed and the manipulated atom on the GaSb behaves as a quantum dot.