Dependence of resistive switching characteristics on device size of Al/HfO<sub>2</sub>/n-Si(100)

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

Thu. Sep 19, 2019 9:00 AM - 12:15 PM E305 (E305)

Shosuke Fujii(Toshiba Memory), Yasushi Hotta(Univ. of Hyogo)

11:00 AM - 11:15 AM

〇Kohei Kobayashi¹, Ryota Teragaki¹, Haruhiko Yoshida¹, Koji Arafune¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

Keywords:Resistive randam-access memory