[19a-E308-1~9] 17.3 Layered materials

[19a-E308-8] Fermi level pinning at the VO₂/MoS₂ interface

〇Mahito Yamamoto¹, Ryo Nouchi^2,3, Teruo Kanki¹, Shu Nakaharai⁴, Azusa Hattori¹, Takashi Taniguchi⁴, Kenji Watanabe⁴, Yutaka Wakayama⁴, Keiji Ueno⁵, Hidekazu Tanaka¹ (1.Osaka Univ., 2.Osaka Pref. Univ., 3.JST PRESTO, 4.NIMS, 5.Saitama Univ.)

Keywords:transition metal dichalcogenides, vanadium dioxide, molybdenum disulfide

We fabricated MoS₂ transistors with both the source and drain electrodes made of VO₂ that undergoes a metal-insualtor transition near room temperature and investigated the contact properties. We found that the Fermi level was pinned near the counduction band edge of MoS₂, and as a result, a barrier with a height of 200 meV was formed at the interface, regardless of the phase state of VO₂.