Fabrication of near-infrared light-emitting diodes with ultra-stable emission wavelength using Tm-doped GaN

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 9:00 AM - 11:45 AM E310 (E310)

Motoaki Iwaya(Meijo Univ.), Hiroto Sekiguchi(Toyohashi Univ. of Tech.)

10:30 AM - 10:45 AM

〇Naoki Yoshioka¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:Tm, near-infrared light-emitting diodes, ultra-stable emission wavelength