[19a-E311-1~8] 6.3 酸化物エレクトロニクス

▲ [19a-E311-7] Fabrication of CoMnGaO₄ thin films with phase separated-structure

〇(M2)Jiaxin Chen¹、Munetoshi Seki¹、Hitoshi Tabata¹ (1.Univ. Tokyo)

キーワード：oxide thin film, phase separation

Nanostructured thin film material is applied in different areas to improve its performance. However, the traditional method to make nanostructure in oxide thin film is complicated, expensive and need lots of processes to deal with it. To overcome these disadvantages, the self-organization and phase separation in oxide thin film may be useful. Some groups reported a crystal phase separation phenomenon in bulk and thin film manganite with a nano-checkerboard structure. This might be a candidate way to realize nanostructure in other kinds of film.