[19a-E313-1~10] 15.5 Group IV crystals and alloys

[19a-E313-10] Enhancement of Photoluminescence Intensity of Ge_1−xSn_x by Heavily Sb Doping

〇Masahiro Fukuda¹, Jihee Jeon¹, Mitsuo Sakashita¹, Shigehisa Shibayama¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:semiconductor, GeSn