The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

Code-sharing session » 【CS.7】 Code-sharing Session of 7.2 & 7.4 & 9.5

[19a-E318-1~12] 【CS.7】 Code-sharing Session of 7.2 & 7.4 & 9.5

Thu. Sep 19, 2019 9:00 AM - 12:15 PM E318 (E318)

Takao Sasagawa(Tokyo Tech), Hideyuki Kawasoko(Tohoku Univ.), Satoshi Toyoda(Tohoku Univ.)

11:30 AM - 11:45 AM

[19a-E318-10] Investigation of Non-Charging Exposure Condition in Electron Beam Lithography

Hideya Mizuno1, Kento Kubo1, Kentaro Kojima1, Masatoshi Kotera1 (1.OIT)

Keywords:Electron beam, Scanning electron microscope, Resist charging

In order to realize a high speed and large capacity semiconductor integrated circuit, it is necessary to further improve the electron beam (EB) drawing technology. At that time, charging at the time of EB exposure to a photomask becomes a problem. In this research, the surface potential at the time of electron beam exposure was measured without contact, and the non-charged state of the resist was searched. At the time of the presentation, we will explain in detail the global charge distribution created by fogging electrons and the conditions for making the local charge distribution just below the EB non-charged.