[19a-E318-1~12] 【CS.7】 Code-sharing Session of 7.2 & 7.4 & 9.5

[19a-E318-5] Structure and Electrical Characteristics of Bismuth Titanate Nanofilms Formed directly on Si(100) Substrates

〇Atsushi Kohno¹, Takayuki Tajiri¹ (1.Fukuoka Univ.)

Keywords:ferroelectric nanofilm, bismuth-layer-structured ferroelectrics, ferroelectric thin film memory

For the purpose of realization of small ferroelectric thin film memory devices, FeFETs, we have develped fabrication processes of Bi layered structure ferroelectrics BixLaxTi3O12 (BLT) nano-films on silicon substrates and researched the relationship between the structure and the electrical characteristics of the metal-ferroelectric-semiconductor capacitors. Especially, the influence of interaface layer formation, interface states, crystal orientation of nanocrystals on the electrical characteristics is important.The BLT thin films formed on the Si (100) substrate by the chemical solution deposition method consisted by nanometer size crystals and they exhibited preferred a-axis orientation. The BLT nanofilms thinner than 20nm even showed clear hystereses in capacitance-voltage(C-V) characteristics of Au/BLT/p-Si. The film structure, crystal orientation, interface layer, intaface states will be discussed.