[19a-N304-1~10] 3.7 Laser processing

[19a-N304-8] Shape control of GaN-LIPSS by anisotropic wet-etching

〇Hidenori Matsuura¹, Reina Miyagawa¹, Osamu Eryu¹ (1.NITech)

Keywords:femtosecond laser

In order to apply femtosecond laser induced periodic structure (LIPSS) to optical devices etc., we are working on control of the shape of LIPSS that influences the device performance. Although previous studies have shown that the aspect ratio of LIPSS changes with the crystal orientation of the irradiated material GaN , precise shape control with laser parameters is difficult. In this research, after forming LIPSS on a GaN substrate using the anisotropy of etching with a strongly basic aqueous solution of GaN, the shape change of LIPSS by KOH etching was investigated.