[19a-PB5-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19a-PB5-12] Electron Transport Properties of strained Ga1-xInxSb Quantum Well Channel Using Al_0.40In_0.60/Al_0.25In_0.75Sb Stepped Buffer

〇Mizuho Hiraoka¹, Yuki Endoh¹, Naoyuki Kishimoto¹, Takuya Hayashi¹, Yuta Kenmochi¹, Ryuto Machida¹, Issei Watanabe², Yoshimi Yamashita², Shinsuke Hara², Takahiro Gotow², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT)

Keywords:High Electron Mobility Transistor, Quantum Well, Strained stepped buffer

GaAs(100)基板上に成長させたAl_0.40In_0.60Sb/Al_0.25In_0.75Sbステップバッファ層を用いた歪Ga_1-xIn_xSb量子井戸(QW)チャネルの電子輸送特性を調べた。引張歪Ga_0.35In_0.65Sb でシート電子密度が最大、無歪Ga_0.22In_0.78Sb で電子移動度が最大となった。