[19p-B01-1~6] Power Electronics and Technology of Thin Films - Surfaces. For realization of low energy consumption society

[19p-B01-1] Materials-related Issues for Development of Next-generation Power Semiconductor Devices

〇Yasuo Yasuo¹ (1.NIMS)

Keywords:power semiconductor, SiC, GaN

As next-generation power semiconductor materials, silicon carbide (SiC) and gallium nitride (GaN) are expected to expand their markets, and gallium oxide (Ga₂O₃) and diamond are attracting attention as successive generation materials. In this presentation we will state the current situation and material-related issues of these semiconductors, wafers, and electronic devices.