1:45 PM - 2:15 PM
[19p-B12-2] Rapid growth of Si with wafer level for solar cells by controlling nano-surface roughness
Keywords:solar cell, silicon, thin film
In the invited talk, I will introduce the successful production of high-quality thin film monocrystalline silicon with a reduced crystal defect density down to the silicon wafer level at a high growth rate. In principle, this method can improve the growth rate and raw material yield up to over about 10 times than before and nearly 100% respectively. Therefore, it can be expected that this technology will make it possible to drastically reduce manufacturing costs while maintaining the power generation efficiency of monocrystalline silicon solar cells, which are used in most high efficient solar cells. The strong dependency of crystal defects on nano-surface roughness of the substrate is an interesting phenomenon as a crystal growth.