[19p-C309-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[19p-C309-5] Relationship Between Temperature Dependence of Photoluminescence Peak Energy and Artificial Wetting Layer in GaAs Quantum Dots Fabricated by Droplet Epitaxy

〇Yudai Miyauchi¹, Yuhei Ezoe¹, Takaaki Mano², Tetsuo Ikari¹, Fukuyama Atsuhiko¹ (1.Univ. of Miyazaki, 2.NIMS)

Keywords:quantum dots, photoluminescence peak energy, wetting layer