The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

3 Optics and Photonics » 3.15 Silicon photonics

[19p-E206-1~19] 3.15 Silicon photonics

Thu. Sep 19, 2019 1:15 PM - 6:45 PM E206 (E206)

Yuya Shoji(Tokyo Tech), Mitsuru Takenaka(Univ. of Tokyo), Nobuhiko Nishiyama(Tokyo Tech)

5:15 PM - 5:30 PM

[19p-E206-14] Alloy formation with Si cap layer at Ge mesa sidewalls selectively grown on Si

〇(M2)Kazuki Kawashita1, Riku Katamawari1, Moise Sotto1, Yasuhiko Ishikawa1 (1.Toyohashi Univ. Tech.)

Keywords:germanium, silicon germanium, natural formation

Ge layer epitaxially grown on Si is used as a photodetector material in Si photonics, and also studied for optical modulators and lasers. In this study, natural formation of SiGe alloy is reported on the sidewall of selectivelly-grown Ge mesa structure at the interface with Si cap layer. Band engineering using such a naturally formed SiGe layer is discussed.