[19p-E214-1~12] 22.1 Joint Session M "Phonon Engineering"

△ [19p-E214-12] Thermal switching behaviors of Y-Mg alloy thin film by H+ intercalation

〇(M1)Hina Saito¹, Yuichiro Yamashita^1,2, Takashi Yagi^1,2, Makoto Kashiwagi¹, Junjun Jia³, Naoyuki Taketoshi^1,2, Yuzo Shigesato¹ (1.Aoyama Univ., 2.AIST, 3.Waseda Univ.)

Keywords:switchable mirror material, thermal switching device, Y-Mg alloy

Y-Mg alloy capped with Pd films were fabricated using dc magnetron sputtering using an Y-Mg alloy target (Y: 60 at%) followed by Pd deposition also by the dc sputtering without exposure to the air. The nominal thicknesses of the Y-Mg films are 100, 200, and 500 nm, whereas that of the Pd layers is about 5 nm. The pressure of Ar gas (99.999%), P_Ar, during the Y-Mg depositions was kept at 1.0 and 3.0 Pa. The Pd was deposited under P_Ar of 0.5 Pa. The substrate temperatures (Ts) are RT and 120 °C. The electrochemical cyclic voltammetry was carried out in 1 M KOH solution using a potentiostat with a function generator. The in-situ thermal diffusivity measurements were carried out using a rear-heating/rear-detection (RR) type picosecond pulsed light heating thermoreflectance apparatus, simultaneously with the electrochemical hydrogenation and dehydrogenation. As a result, the change of the thermoreflectance measurement signal accompanying H + intercalation was detected clearly.