[19p-E310-1~20] 15.4 III-V-group nitride crystals

[19p-E310-6] In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate grown by PVT and a homoepitaxial film

〇Shigefusa Chichibu¹, Kazunobu Kojima¹, Kouji Hazu¹, Youichi Ishikawa¹, Kentaro Furusawa¹, Seiji Mita², Ramon Collazo³, Zlatko Sitar³, Akira Uedono⁴ (1.Tohoku Univ., 2.Adroit Materials, 3.NC State Univ., 4.Univ. of Tsukuba)

Keywords:Nitride Semiconductors, AlN, Time-resolved cathodoluminescence

In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN and a homoepitaxial film grown by MOVPE at high temperature will be presented.