[19p-E312-1~13] 6.2 Carbon-based thin films

[19p-E312-2] NV center formation efficiency by high temperature high pressure treatment

〇Taisei Higuchi^1,2, Shinobu Onoda², Hiroyuki Saito², Yu Nishihara³, Wataru Kada¹, Takeshi Ohshima², Osamu Hanaizumi¹ (1.Gunma univ., 2.QST, 3.Ehime Univ)

Keywords:Diamond, NV center

Nitrogen vacancy (NV) center is expected to be sensors for measuring small physical quantities. In order to improve the sensitivity of quantum sensor, it is important to create an NV center at a high concentration with controlled orientation. In this study, the electron irradiated diamond was annealed by anisotropic or isotropic high temperature high pressure (HPHT) technique. The effect of anisotropic and isotropic HPHT treatment on creation efficiency of NV centers is studied. As a result, the creation efficiency of NV centers decreases with increase in displacement during anisotropic HPHT treatment.