[19p-E313-1~9] 15.5 Group IV crystals and alloys

△ [19p-E313-9] Dependence of field effect mobility of strained Si/relaxed SiGe/Si(110) p-MOSFET on strained Si layer thickness

〇(B)Taisuke Fujisawa¹, Astushi Onogawa¹, Daichi Namiuchi¹, Shingo Saito¹, Yuichi Sano¹, Daisuke Izumi¹, Junji Yamanaka¹, Kosuke Hara¹, Kentaro Sawano², Kiyokazu Nakagawa¹, Keisuke Arimoto¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

Keywords:strained Si, mobility

In order to realize high performance and low power consumption of CMOS devices, it is necessary to improve the hole mobility. It has been reported that the extension strained Si formed on the (110) plane shows high hole mobility . In particular, the thickness of the strained Si layer is an important parameter in determining the device characteristics. In the previous researches, we investigated the critical thickness of strained Si. In this study, we fabricated p-MOSFETs with different thicknesses of strained Si layers and investigated the thickness dependence of field effect mobility.