[19p-PA6-1~28] 3.12 Nanoscale optical science and near-field optics

[19p-PA6-1] Deep UV Photoluminescence Enhancement of AlGaN / AlN MQW by Surface Plasmon Resonance

〇Kohei Shimanoe¹, Tetsuya Matsuyama¹, Kenji Wada¹, Hideto Miyake², Koichi Okamoto¹ (1.Osaka Prefecture Univ., 2.Mie Univ.)

Keywords:plasmonics, semiconductor, deep ultraviolet

AlGaN/AlN multiple quantum wells (MQWs), which have been used as deep UV emitting materials, have extremely low luminous efficiencies. One way to improve efficiency is to use surface plasmon (SP) resonance. In this study, we tried to enhance deep UV emissions from very multi-layered (up to 75 layers) of AlGaN/AlN MQW and emission enhancement has been achieved by using metal Gallium which has plasmonic properties in the ultraviolet region.